CPH5815 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC / DC Converter Applications

CPH5815
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
ID=--1mA, VGS=0
VDS=--12V, VGS=0
VGS=±8.0V, VDS=0
VDS=--6V, ID=--1mA
VDS=--6V, ID=--0.8A
ID=--0.8A, VGS=--4.5V
ID=--0.4A, VGS=--2.5V
ID=--0.1A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--1.5A
VDS=--6V, VGS=--4.5V, ID=--1.5A
VDS=--6V, VGS=--4.5V, ID=--1.5A
IS=--1.5A, VGS=0
IR=0.5mA
IF=0.3A
IF=0.5A
VR=6V
VR=10V, f=1MHz cycle
IF=IR=100mA, see specified Test Circuit.
Electrical Connection
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
(Top view)
Ratings
Unit
min
typ
max
--12
--0.3
1.3
1.8
220
320
430
160
45
35
11
45
29
30
2.6
0.25
0.65
--0.92
V
--10 µA
±10 µA
--1.0
V
S
290 mΩ
450 mΩ
650 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.5
V
15
V
0.35
0.41
V
0.4
0.46
V
200 µA
20
pF
10 ns
Switching Time Test Circuit
[MOSFET]
trr Test Circuit
[SBD]
VIN
0V
--4.5V
VIN
PW=10µs
D.C.≤1%
G
VDD= --6V
ID= --0.8A
RL=7.5Ω
D
VOUT
Duty≤10%
50Ω
100Ω
10Ω
10µs
--5V
trr
CPH5815(MOSFET)
P.G
50Ω
S
No.7381-2/5