CPH5805 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC / DC Converter Applications

CPH5805
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=3A
VDS=10V, VGS=10V, ID=3A
VDS=10V, VGS=10V, ID=3A
IS=3A, VGS=0
IR=0.5mA
IF=0.3A
IF=0.5A
VR=10V
VR=10V, f=1MHz cycle
IF=IR=100mA
Electrical Connection (Top view)
5
4
3
1 : Cathode
2 : Drain
3 : Gate
4 : Source
1
2
5 : Anode
Ratings
Unit
min
typ
max
30
1.2
2.1
3
64
105
180
42
25
7
28
18.5
4.4
4.9
0.93
0.63
0.85
V
1
µA
±10
µA
2.6
V
S
84 mΩ
150 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2
V
30
V
0.35
0.4
V
0.42
0.47
V
200
µA
20
pF
10
ns
Switching Time Test Circuit
[MOSFET]
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=15V
ID=1A
RL=15Ω
D
VOUT
CPH5805
P.G
50Ω
S ^(MOSFET)
trr Test Circuit
[SBD]
Duty≤10%
50Ω
100Ω
10Ω
10µs
--5V
trr
No.6981-2/5