CPH5801 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC/DC Converter Applications

CPH5801
Electrical Characteristics at Ta = 25˚C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Marking : QA
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=700mA
ID=700mA, VGS=4V
ID=400mA, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
IS=1.4A, VGS=0
VR
VF1
VF2
IR
C
trr
Rthj-a
IR=1mA
IF=0.5A
IF=2A
VR=15V
VR=10V, f=1MHz cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm²Ã—0.8mm)
Electrical Connection (Top view)
A
S
G
Ratings
Unit
min
typ
max
20
V
10 µA
±10 µA
0.4
1.3 V
1.8
2.5
S
200 260 mΩ
260 360 mΩ
90
pF
60
pF
28
pF
10
ns
20
ns
20
ns
20
ns
6
nC
1
nC
2
nC
0.9
1.2 V
30
V
0.35
0.4 V
0.42 0.47 V
500 µA
35
pF
15 ns
110
˚C/W
C
D
Switching Time Test Circuit
[MOSFET block]
VIN
4V
0V
PW=10µs
D.C.≤1%
VIN
G
VDD=10V
ID=700mA
RL=14.3Ω
VOUT
D
P.G
50Ω
CPH5801
S
Reverse Recovery Time Test Circuit
[SBD block]
Duty≤10%
10µs 50Ω
100Ω
10Ω
--5V
trr
No.6427–2/5