CPH5705 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC / DC Converter Applications

CPH5705
Electrical Characteristics at Ta=25°C
Parameter
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--12V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--0.5A
VCE=--2V, IC=--0.5A
VCB=--10V, f=1MHz
IC=--1.5A, IB=--30mA
IC=--1.5A, IB=--30mA
IC=--10µA, IE=0
IC=--1mA, RBE=∞
IE=--10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VR
VF1
VF2
IR
C
trr
Rth j-a
IR=1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
Mounted on a ceramic board (600mm²!0.8mm)
Ratings
min
typ
200
380
25
--155
--0.83
--30
--30
--5
50
270
25
15
0.30
0.35
42
110
Unit
max
--0.1
--0.1
560
--230
--1.2
µA
µA
MHz
pF
mV
V
V
V
V
ns
ns
ns
V
0.35
V
0.40
V
500
µA
pF
15
ns
°C/W
Electrical Connection
A
E
B
C
C
(Top view)
Switching Time Test Circuit
trr Test Circuit
[TR]
[SBD]
PW=20µs
IB2
D.C.≤1%
IB1
INPUT
RB
VR
50Ω
+
+
OUTPUT
RL
Duty≤10%
10µs
50Ω
100Ω
10Ω
220µF 470µF
trr
–5V
VBE=5V
VCC= –5V
–20IB1= 20IB2= IC= –1.5A
No.6591-2/5