CPH5704 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC/DC Converter Applications

CPH5704
Electrical Characteristics at Ta = 25˚C
Parameter
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=12V, IE=0
VEB=4V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=0.5A
VCB=10V, f=1MHz
IC=1.5A, IB=30mA
IC=1.5A, IB=30mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VR
VF1
VF2
IR
C
trr
Rthj-a
IR=1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm²Ã—0.8mm)
Electrical Connection
AE
B
Ratings
Unit
min
typ
max
200
380
23
100
0.85
15
15
5
30
210
11
0.1 µA
0.1 µA
560
MHz
pF
150 mV
1.2 V
V
V
V
ns
ns
ns
15
V
0.30 0.35 V
0.35 0.40 V
500 µA
42
pF
15 ns
110
˚C/W
C
C
(Top view)
Switching Time Test Circuit
[TR]
[SBD]
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
1kΩ
+
Duty≤10%
OUTPUT
RL
+
10µs
50Ω
100Ω
10Ω
220µF 470µF
–5V
VBE=–5V
VCC=5V
20IB1= –20IB2= IC=1.5A
10mA
trr
No.6320–2/5