CPH5703 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC/DC Converter Applications

CPH5703
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Turn-OFF Time
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1.0A, IB=50mA
IC=2.0A, IB=100mA
IC=1.0A, IB=50mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VR
VF
IR
C
trr
Rthj-a
IR=200µA
IF=500mA
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm²Ã—0.8mm)
Electrical Connection (Top view)
5
4
3
Ratings
Unit
min
typ
max
1 µA
1 µA
200
560
380
MHz
13
pF
80 120 mV
140 210 mV
0.9
1.2 V
60
V
50
V
6
V
35
ns
300
ns
22
ns
50
V
0.55 V
50 µA
22
pF
10 ns
151
˚C/W
1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode
1
2
Switching Time Test Circuit
(TR)
IB1
PW=20µs
IB2
D.C.≤1% _{I NPUT}
RB
50Ω
VR
+
100µF
+
470µF
OUTPUT
RL
10IB1=–10IB2=IC=1A
VBE=–5V
(For PNP, the polarity is reversed.)
(SBD)
Duty≤10%
10µs
50Ω
100Ω
VCC=25V
10mA
10Ω
–5V
trr
No.6092–2/5