CPH5701 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC/DC Converter Applications

CPH5701
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Electrical Connection
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=–12V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=–0.5A
VCE=–2V, IC=–3A
VCE=–2V, IC=–0.5A
VCB=–10V, f=1MHz
IC=–1.5A, IB=–30mA
IC=–1.5A, IB=–30mA
IC=–10µA, IE=0
IC=–1mA, RBE=∞
IE=–10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VR
VF1
VF2
IR
C
trr
Rthj-a
IR=1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm²Ã—0.8mm)
AE
B
Ratings
Unit
min typ max
200
70
280
36
–110
–0.85
–15
–12
–5
30
90
10
–0.1 µA
–0.1 µA
560
–165
–1.2
MHz
pF
mV
V
V
V
V
ns
ns
ns
15
V
0.30 0.35 V
0.35 0.40 V
500 µA
42
pF
15 ns
110
˚C/W
C
C
(Top view)
Switching Time Test Circuit
[TR]
[SBD]
PW=20µs
IB2
D.C.≤1%
IB1
INPUT
OUTPUT
Duty≤10%
10µs
RB
VR
RL
50Ω
+
+
50Ω
100Ω
10Ω
220µF 470µF
–5V
VBE=5V
VCC=–5V
–20IB1= 20IB2= IC=–1.5A
10mA
trr
No.6319–2/5