CPH5504 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – High-Current Switching Applications

CPH5504
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Marking : ED
Symbol
Conditions
VCE(sat)
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
IC=10µA, IE=0
IC=100µA, RBE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Ratings
Unit
min
typ
max
80
120 mV
140
210 mV
0.88
1.2
V
80
V
80
V
50
V
6
V
35
ns
300
ns
22
ns
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
100µF
OUTPUT
RL
+
470µF
VBE= –5V
VCC=25V
10IB1= –10IB2= IC= 1A
Electrical Connection
B1 EC B2
C1 C2
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1000
7
5
3
2
100
7
5
3
2
IC -- VCE
100mA
80mA
60mA
40mA
20mA
10mA
5.0mA
IB=0
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V IT02464
hFE -- IC
VCE=2V
Ta=75°C
--25°C _25°C
10
0.01
23
5 7 _0.1
2 3 5 7 _1.0
23
Collector Current, IC -- A
IT02466
3.0
VCE=2V
2.5
IC -- VBE
2.0
1.5
1.0
0.5
0
0
1000
7
5
3
2
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
fT -- IC
IT02465
VCE=10V
100
7
5
3
2
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
Collector Current, IC -- A
23 5
IT02467
No.6793-2/4