CPH3456 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device

Electrical Characteristics at Ta=25°C
CPH3456
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4.5V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=3.5A
VDS=10V, VGS=4.5V, ID=3.5A
VDS=10V, VGS=4.5V, ID=3.5A
IS=3.5A, VGS=0V
Switching Time Test Circuit
VIN
4.5V
0V
PW=10μs
D.C.≤1%
VIN
G
VDD=10V
ID=1.5A
RL=6.67Ω
D
VOUT
P.G
50Ω
S ^CPH3456
Ratings
Unit
min
typ
max
20
V
1
μA
±10
μA
0.4
1.3
V
2.8
S
54
71 mΩ
73
103 mΩ
104
156 mΩ
260
pF
65
pF
50
pF
6.2
ns
19
ns
30
ns
28
ns
2.8
nC
0.6
nC
0.9
nC
0.85
1.2
V
ID -- VDS
4.0
3.5
3.0
2.5
2.0
1.5
1.5V
1.0
0.5
VGS=1.2V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT15111
5
VDS=10V
4
ID -- VGS
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Gate-to-Source Voltage, VGS -- V IT15112
No. A1803-2/4