CPH3437 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

CPH3437
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=4V, ID=4.5A
VDS=10V, VGS=4V, ID=4.5A
VDS=10V, VGS=4V, ID=4.5A
IS=4.5A, VGS=0
Ratings
Unit
min
typ
max
9.9
nC
1.35
nC
3.5
nC
0.84
1.2
V
Package Dimensions
unit : mm
2152A
2.9
0.4
3
0.15
0.05
1
2
1.9
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=2.5A
RL=4Ω
D
VOUT
CPH3437
P.G
50Ω
S
ID -- VDS
4.5
4.0
3.5
3.0
2.5
1.5V
2.0
1.5
1.0
0.5
VGS=1.0V
0
0
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
Drain-to-Source Voltage, VDS -- V IT08822
RDS(on) -- VGS
100
Ta=25°C
90
80
2A
70
ID=1A
60
50
40
30
20
10
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT08824
ID -- VGS
4.5
VDS=10V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
Gate-to-Source Voltage, VGS -- V IT08823
RDS(on) -- Ta
70
60
50
40
30
I D=I1DIA=D,2=VA2G,AVS,=VG2SG.5=SV4=.04V.5V
20
10
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08825
No.8161-2/4