CPH3423 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

CPH3423
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=10V, ID=1.5A
VDS=30V, VGS=10V, ID=1.5A
VDS=30V, VGS=10V, ID=1.5A
IS=1.5A, VGS=0
Ratings
Unit
min
typ
max
4.8
nC
1.0
nC
1.0
nC
0.89
1.2
V
Package Dimensions
unit : mm
2152A
2.9
0.4
3
0.15
0.05
1
2
1.9
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=30V
ID=0.75A
RL=40Ω
D
VOUT
CPH3423
P.G
50Ω
S
ID -- VDS
1.5
3.0V
1.2
0.9
0.6
2.5V
0.3
VGS=2.0V
0
0
0.3
0.6
0.9
1.2
1.5
Drain-to-Source Voltage, VDS -- V IT07489
RDS(on) -- VGS
600
Ta=25°C
550
ID=0.75A
500
450
400
350
300
250
200
150
0
2
4
6
8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT07491
3.0
VDS=10V
2.5
ID -- VGS
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT07490
RDS(on) -- Ta
600
550
500
450
400
350
300
250
I DI _{D==0.07.57A5A,} ^V, _VGGS=S4=V10V
200
150
100
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07492
No.7915-2/4