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CPH3414 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications
CPH3414
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=2.2A
VDS=10V, VGS=10V, ID=2.2A
VDS=10V, VGS=10V, ID=2.2A
IS=2.2A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=15V
ID=1A
RL=15Ω
D
VOUT
CPH3414
P.G
50Ω
S
Ratings
Unit
min
typ
max
120
pF
30
pF
15
pF
6
ns
4
ns
17
ns
5
ns
3.6
nC
0.6
nC
0.5
nC
0.9
1.2
V
ID -- VDS
3.0
2.5
2.0
5V
6V
8V
1.5
VGS=3V
1.0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V IT02698
RDS(on) -- VGS
400
Ta=25°C
350
300
250
ID=0.5A 1A
200
150
100
50
0
0
1
2
3
4
5
6
7
8
9 10
Gate-to-Source Voltage, VGS -- V IT02700
3.0
VDS=10V
2.5
ID -- VGS
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT02699
RDS(on) -- Ta
300
250
200
I D=0.5A, V GS=4V
150
ID=1.0A, VGS=10V
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02701
No.6862-2/4