CPH3413 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

CPH3413
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=4V, ID=2.2A
VDS=10V, VGS=4V, ID=2.2A
VDS=10V, VGS=4V, ID=2.2A
IS=2.2A, VGS=0
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=1A
RL=10Ω
D
VOUT
CPH3413
P.G
50Ω
S
Ratings
Unit
min
typ
max
190
pF
40
pF
25
pF
9
ns
25
ns
25
ns
18
ns
2.7
nC
0.6
nC
0.6
nC
0.89
1.2
V
ID -- VDS
2.0
1.8 _4.0V
1.6 _3.0V
1.4
2.5V
VGS=1.5V
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT02687
RDS(on) -- VGS
300
Ta=25°C
250
200
1.0A
150 ^ID=0.5A
100
50
0
0
1
2
3
4
5
6
7
8
9 10
Gate-to-Source Voltage, VGS -- V IT02689
3.0
VDS=10V
2.5
ID -- VGS
2.0
1.5
1.0
0.5
0
0
0.4
0.8
1.2
1.6
2.0
Gate-to-Source Voltage, VGS -- V IT02688
RDS(on) -- Ta
250
200
150
ID=0.5A, ^VGS=2.5V
100
ID=1.0A, ^VGS=4.0V
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02690
No.6924-2/4