CPH3410 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

CPH3410
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=2.5A
VDS=10V, VGS=10V, ID=2.5A
VDS=10V, VGS=10V, ID=2.5A
IS=2.5A, VGS=0
Switching Time Test Circuit
4V ^VIN
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=1.2A
RL=8.33Ω
D
VOUT
P.G
50Ω
S ^CPH3410
Ratings
Unit
min
typ
max
200
pF
70
pF
45
pF
8
ns
30
ns
28
ns
42
ns
7
nC
0.5
nC
1
nC
0.85
1.2
V
2.4
2.2 ^6.0V
4.0V
2.0
3.0V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
300
ID -- VDS
2.0V
VGS=1.5V
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V IT01521
RDS(on) -- VGS
Ta=25°C
250
200
1.2A
150 ^ID=0.6A
100
50
0
01
2
34
56
7
8
9 10
Gate-to-Source Voltage, VGS -- V IT01523
3.0
VDS=10V
2.5
ID -- VGS
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V IT01522
RDS(on) -- Ta
250
200
150
100
IDID==0.18.A2A, ^V, _{VGGS=S2=.45.V0V}
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT01524
No.6777-2/4