CPH3408 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

CPH3408
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
IS=5A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=15V
ID=3A
RL=5Ω
D
VOUT
CPH3408
P.G
50Ω
S
Ratings
Unit
min
typ
max
480
pF
130
pF
70
pF
9
ns
64
ns
36
ns
45
ns
11
nC
1.0
nC
2.0
nC
0.8
1.2
V
ID -- VDS
5.0
4.5
4.0
2.5V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS=2.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT03479
RDS(on) -- VGS
120
Ta=25°C
100
80
3A
ID=1A
60
40
20
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT03481
6
VDS=10V
5
ID -- VGS
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-to-Source Voltage, VGS -- V IT03480
RDS(on) -- Ta
120
100
80
60
ID=1A, ^VGS=4V
40
ID=3A, ^VGS=10V
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03482
No.6998-2/4