CPH3251 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

CPH3251
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=100V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=100mA
VCB=10V, f=1MHz
IC=1A, IB=100mA
IC=0.5A, IB=50mA
IC=1A, IB=100mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
typ
200
130
13
100
60
0.85
150
150
120
7
50
1250
60
max
1
1
560
150
90
1.2
Unit
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7015A-003
2.9
3
1
0.95
2
0.4
0.15
0.05
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT ^VR10
RB
50Ω
+
100μF
VBE= --5V
IC=10IB1= --10IB2=0.5A
OUTPUT
RL
+
470μF
VCC=60V
IC -- VCE
2.0
1.8
80mA ^90mA
1.6
1.4
70mA
1.2
1.0
60mA
50mA
40mA
30mA
20mA
0.8
10mA
0.6
5mA
0.4
0.2
0
IB=0mA
0
0.1
0.2
0.3
0.4
0.5
Collector-to-Emitter Voltage, VCE -- V IT12718
2.0
1.8 ^70mA
1.6
1.4
IC -- VCE
60mA
50mA
40mA
30mA
20mA
1.2
10mA
1.0
0.8
2mA
0.6
0.4
0.2
0
IB=0mA
0
1
2
3
4
5
Collector-to-Emitter Voltage, VCE -- V IT12719
No. A0871-2/4