CPH3249 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

CPH3249
Continued from preceding page.
Parameter
Symbol
Conditions
min
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=0.5A, IB=0.1A
Base-to-Emitter Saturation Voltage
VBE(sat) IC=0.5A, IB=0.1A
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=1mA, IE=0A
700
Collector-to-Emitter Breakdown Voltage
V(BR)CEO IC=5mA, RBE=∞
350
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=1mA, IC=0A
8
Turn-ON Time
Storage Time
ton
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
tstg
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
Fall Time
tf
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
Note : Since the above stated product is a high-voltage device, so please pay attention to its reliability when in use.
Ratings
typ
Unit
max
0.8
V
1.5
V
V
V
V
1.0 µs
2.5 µs
0.3 µs
Package Dimensions
unit : mm (typ)
7015A-005
2.9
3
1
0.95
2
0.4
0.15
0.05
1 : BaseEmitter
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
OUTPUT
RL
100Ω
+
470µF
VCC=200V
IC -- VCE
1.0
150mA
0.9
90mA 80mA 70mA
0.8
100mA
0.7
0.6
0.5
30mA
20mA
0.4
10mA
0.3
60mA 50mA 40mA
0.2
0.1
0
0
1000
7
5
3
2
100
7
5
3
2
IB=0mA
1
2
3
4
5
6
7
8
Collector-to-Emitter Voltage, VCE -- V IT12843
hFE -- IC
VCE=5V
Ta=120°C
25°C
--40°C
10
7
5
3
2
1.0
0.001
23
5 7 _0.01 2 3 5 7 _0.1 2 3
Collector Current, IC -- A
5 7 _1.0
IT12845
IC -- VBE
1.0
VCE=5V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE -- V IT12844
hFE -- IC
3
2
100
7
1V
5
3
2
10
7
5
3
0.001
23
5 7 _0.01 2 3 5 7 _0.1 2 3
Collector Current, IC -- A
5 7 _1.0
IT12846
No. A0920-2/4