CPH3246 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
CPH3246
Symbol
Conditions
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1A, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
Unit
min
typ
max
80
120 mV
70
110 mV
0.85
1.2
V
100
V
100
V
60
V
6.5
V
35
ns
680
ns
24
ns
Package Dimensions
unit : mm
7015A-003
2.9
3
1
0.95
2
0.4
0.15
0.05
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT ^VR10
RB
50Ω
+
100µF
VBE= --5V
10IB1= --10IB2=IC=0.5A
OUTPUT
RL
+
470µF
VCC=30V
IC -- VCE
5
100mA
4
80mA
60mA
3
40mA
20mA
2
10mA
5mA
1
2mA
0
IB=0mA
0
0.2
0.4
0.6
0.8
1.0
Collector-to-Emitter Voltage, VCE -- V IT10994
3.0
VCE=2V
2.5
IC -- VBE
2.0
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT10995
No. A0399-2/4