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CPH3239 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC / DC Converter Applications
CPH3239
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Marking : DK
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=2A, IB=40mA
IC=2A, IB=40mA
IC=10µA, IE=0
IC=100µA, RBE=∞
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Ratings
min
typ
250
330
26
85
0.80
100
100
50
6
32
420
28
max
0.1
0.1
400
130
1.2
Unit
µA
µA
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mmm
2150A
2.9
0.4
3
0.15
0.05
1
2
1.9
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
100µF
OUTPUT
RL
+
470µF
VBE= --5V
VCC=25V
IC= --20IB1= 20IB2=2.5A
IC -- VCE
5.0
60mA
4.5
40mA
4.0
3.5
20mA
3.0
15mA
2.5
8mA 10mA
2.0
6mA
1.5
4mA
1.0
2mA
0.5
0
IB=0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT06830
5.0
VCE=2V
4.5
IC -- VBE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT06831
No.7723-2/4