CPH3237 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Marking : DH
CPH3237
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=3A, IB=60mA
IC=3A, IB=60mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
Ratings
Unit
min
typ
max
80
120 mV
0.85
1.2
V
15
V
15
V
5
V
32
ns
250
ns
10
ns
Package Dimensions
unit : mm
2150A
2.9
0.4
3
1
2
1.9
0.15
0.05
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
IC=20IB1= --20IB2=3A
OUTPUT
RL
+
470µF
VCC=5V
IC -- VCE
6
20mA
5
15mA
4
10mA
3
8mA
6mA
2
4mA
1
2mA
0
IB=0
0
0.2
0.4
0.6
0.8
1.0
Collector-to-Emitter Voltage, VCE -- V IT06851
hFE -- IC
7
VCE=2V
5
Ta=75°C
3
25°C
--25°C
2
100
0.01
23
5 7 _0.1 2 3 5 7 _1.0 2 3 5 7 ₁₀
Collector Current, IC -- A
IT06853
6
VCE=2V
5
IC -- VBE
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT06852
VCE(sat) -- IC
3
IC / IB=20
2
0.1
7
5
3
2
Ta=75-^°_-C25°^C _25°C
0.01
7
5
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10
Collector Current, IC -- A
IT06854
No.7722-2/4