CPH3116 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC/DC Converter Applications

CPH3116/CPH3216
Continued from preceding page.
Parameter
Symbol
Conditions
Collector-to-Emitter Saturation Voltage
VCE(sat)1 IC=(–)500mA, IB=(–)10mA
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
VCE(sat)2 IC=(–)300mA, IB=(–)6mA
VBE(sat) IC=(–)500mA, IB=(–)10mA
V(BR)CBO IC=(–)10µA, IE=0
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
V(BR)CES IC=(–)100µA, RBE=0
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified test circuit.
tstg
See specified test circuit.
tf
See specified test circuit.
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
(For PNP, the polarity is reversed.)
Input
RB
VR
RL
50Ω
+
+
100µF 470µF
–5V
25V
20IB1= –20IB2= IC=500mA
--1000
CPH3116
IC -- VCE
--40mA ^--30mA
--800
--600
--20mA
--10mA _--8mA
--6mA
--4mA
1000
40mA
800
600
--400
--2mA
400
Ratings
Unit
min typ max
(–280) (–430) mV
130 190 mV
(–145) (–220) mV
90 135 mV
(–)0.81 (–)1.2 V
(–50)
V
80
V
(–)50
V
80
V
(–)50
V
(–)5
V
35
ns
(170)
ns
330
ns
(30)40
ns
IC -- VCE
30mA
10mA
8mA
6mA
4mA
2mA
--200
0
0
--1.0
--0.9
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
0
IB=0
--0.2
--0.4
--0.6
--0.8
Collector-to-Emitter Voltage, VCE – V
IC -- VBE
--1.0
IT01643
CPH3116
VCE=--2V
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE – V IT01645
200
0 ^CPH3216
IB=0
0
0.2
0.4
0.6
0.8
1.0
Collector-to-Emitter Voltage, VCE – V _IT01644
IC -- VBE
1.0
CPH3216
0.9
VCE=2V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE – V IT01646
No.6405–2/5