|
CPH3110 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC/DC Converter Applications | |||
|
◁ |
CPH3110/3210
Continued from preceding page.
Parameter
Symbol
Conditions
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Turn-OFF Time
Switching Time Test Circuit
VCE(sat) IC=(â)2.5A, IB=(â)50mA
VBE(sat) IC=(â)2.5A, IB=(â)50mA
V(BR)CBO IC=(â)10µA, IE=0
V(BR)CEO
V(BR)EBO
ton
IC=(â)1mA, RBE=â
IC=(â)10µA, IC=0
See specified test circuit.
tstg
See specified test circuit.
tf
See specified test circuit.
PW=20µs
D.C.â¤1%
I NPUT
50â¦
IB1
IB2
RB
VR
+
100µF
OUTPUT
RL
+
470µF
Ratings
Unit
min typ max
(â140) (â210) mV
110 165 mV
(â0.81) (â)1.2 V
0.82
V
(â30)
V
40
V
(â)30
V
(â)6
V
(30)30
ns
(190)
ns
320
ns
(17)14
ns
VBE=-5V
20IB1=-20IB2=IC=2.5A
(For PNP, the polarity is reversed.)
IC -
-5.0
CPH3110
-50mA
-60mA
-70mA
-4.0
-80mA
-90mA
-100mA
VCE
-3.0
-2.0
VCC=12V
-40mA
-30mA
-20mA
-10mA
-1.0
IB=0
0
0
-100
-200
-300
-400
-500
Collector-to-Emitter Voltage, VCE â mV
-1.0
CPH3110
-0.9 VCE=-2V
IC - VBE
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9
Base-to-Emitter Voltage, VBE â V
5.0
CPH3210
4.0
IC - VCE
30mA
20mA
3.0
10mA
2.0
90mA
80mA
70mA
1.0
60mA
50mA
40mA
IB=0
0
0
100
200
300
400
500
Collector-to-Emitter Voltage, VCE â mV
1.0
CPH3210
0.9 VCE=2V
IC - VBE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Base-to-Emitter Voltage, VBE â V
No.6079â2/5
|
▷ |