CPH3109 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC/DC Converter Applications

CPH3109/CPH3209
Continued from preceding page.
Parameter
Symbol
Conditions
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
VCE(sat)1 IC=(–)1.5A, IB=(–)30mA
VCE(sat)2 IC=(–)1.5A, IB=(–)75mA
VBE(sat) IC=(–)1.5A, IB=(–)30mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified test circuit.
tstg
See specified test circuit.
tf
See specified test circuit.
Switching Time Test Circuit
IB1
PW=20µs
IB2
DC≤1%
I NPUT
RB
50Ω
VR
+
100µF
OUTPUT
24Ω
+
470µF
Ratings
Unit
min typ max
(–155) (–230) mV
120 180 mV
(–)105 (–)155 mV
(–)0.83 (–)1.2 V
(–30)
V
40
V
(–)30
V
(–)5
V
(50)30
ns
(270)
ns
300
ns
(25)15
ns
-5V
12V
20IB1=-20IB2=IC=500mA
(For PNP, the polarity is reversed.)
IC - VCE
-2.0
2.0
-30mA
-40mA
-20mA
CPH3109
-10mA
-1.6
-8.0mA
1.6
-6.0mA
-1.2
1.2
-4.0mA
-0.8
0.8
-2.0mA
-0.4
0.4
0
IB=0
0
0
-200
-400
-600
-800
-1000
0
Collector-to-Emitter Voltage, VCE – mV
IC - VBE
-4.0
4.0
CPH3109
-3.5
VCE=-2V
3.5
-3.0
3.0
-2.5
2.5
-2.0
2.0
-1.5
1.5
-1.0
1.0
-0.5
0.5
0
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
0
Base-to-Emitter Voltage, VBE – V
IC - VCE
10mA ^8.0mA
6.0mA
40mA
30mA
20mA
4.0mA
2.0mA
CPH3209
IB=0
200
400
600
800
1000
Collector-to-Emitter Voltage, VCE – mV
IC - VBE
CPH3209
VCE=2V
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE – V
1.2
No.6078–2/5