BXL4004 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

BXL4004
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Conditions
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=50A, VGS=4.5V
VDS=20V, f=1MHz
See Fig.2
VDS=24V, VGS=10V, ID=100A
IS=100A, VGS=0V
See Fig.3
IS=100A, VGS=0V, di/dt=100A/μs
Ratings
Unit
min
typ
max
40
V
10
μA
±10
μA
1.2
2.6
V
120
S
3
3.9 mΩ
4.7
6.6 mΩ
8200
pF
940
pF
700
pF
65
ns
390
ns
510
ns
360
ns
140
nC
43
nC
25
nC
1.0
1.2
V
90
ns
230
nC
Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit
L
≥50Ω
VIN
10V
0V
VIN
VDD=24V
ID=50A
RL=0.48Ω
10V
50Ω
0V
BXL4004
VDD
D
PW=10μs
D.C.≤1%
G
VOUT
BXL4004
P.G
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
BXL4004 D
G
L
S
VDD
Driver MOSFET
Ordering Information
Device
BXL4004-1E
Package
TO-220-3L
Shipping
50pcs./magazine
memo
Pb Free and Halogen Free
No.9050-2/7