BFL4036 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BFL4036
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=400V, VGS=0V
VGS=±24V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See Fig.2
See Fig.2
See Fig.2
See Fig.2
VDS=200V, VGS=10V, ID=14A
VDS=200V, VGS=10V, ID=14A
VDS=200V, VGS=10V, ID=14A
IS=14A, VGS=0V
See Fig.3
IS=14A, VGS=0V, di/dt=100A/μs
Ratings
Unit
min
typ
max
500
V
100
μA
±10
μA
3
5
V
3.5
7
S
0.4
0.52
Ω
1000
pF
200
pF
44
pF
22
ns
66
ns
117
ns
46
ns
38.4
nC
6.7
nC
22.1
nC
0.95
1.3
V
520
ns
4200
nC
Fig.1 Avalanche Resistance Test Circuit
≥50Ω
RG
D
L
G
BFL4036
10V
0V
50Ω
S
Fig.2 Switching Time Test Circuit
VDD
VIN
10V
0V
VIN
PW=10μs
D.C.≤0.5%
G
VDD=200V
ID=7A
RL=28.6Ω
D
VOUT
BFL4036
P.G
RGS=50Ω ^S
Fig.3 Reverse Recovery Time Test Circuit
BFL4036 D
G
500μH
S
VDD=50V
Driver MOSFET
No. A1830-2/5