BFL4026_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

BFL4026
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Conditions
ID=10mA, VGS=0V
VDS=720V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=2.5A
ID=2.5A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=5A
IS=5A, VGS=0V
See Fig.3
IS=5A, VGS=0V, di/dt=100A/μs
Ratings
Unit
min
typ
max
900
V
1.0 mA
±100 nA
2.0
4.0
V
1.4
2.8
S
2.8
3.6
Ω
650
pF
100
pF
35
pF
14
ns
37
ns
117
ns
39
ns
33
nC
5.3
nC
16.5
nC
0.85
1.2
V
720
ns
4700
nC
Fig.1 Avalanche Resistance Test Circuit
D
L
≥50Ω
RG _G
S ^BFL4026
10V
0V
50Ω
VDD
Fig.2 Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤0.5%
G
VDD=200V
ID=2.5A
RL=80Ω
D
VOUT
BFL4026
P.G
RGS=50Ω ^S
Fig.3 Reverse Recovery Time Test Circuit
D
BFL4026
G
S
500μH
VDD=50V
Driver MOSFET
Ordering Information
Device
BFL4026-1E
Package
TO-220F-3FS
Shipping
50pcs./magazine
memo
Pb Free
No.A1797-2/7