BFL4004 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BFL4004
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=640V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=3.25A
ID=3.25A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See Fig.2
See Fig.2
See Fig.2
See Fig.2
VDS=200V, VGS=10V, ID=6.5A
VDS=200V, VGS=10V, ID=6.5A
VDS=200V, VGS=10V, ID=6.5A
IS=6.5A, VGS=0V
See Fig.3
IS=6.5A, VGS=0V, di/dt=100A/μs
Ratings
Unit
min
typ
max
800
V
1.0 mA
±100 nA
2.0
4.0
V
1.7
3.4
S
1.9
2.5
Ω
710
pF
120
pF
42
pF
17
ns
44
ns
130
ns
44
ns
36
nC
6.2
nC
18
nC
0.85
1.2
V
780
ns
5400
nC
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
L
≥50Ω
RG
VIN
10V
0V
VIN
VDD=200V
ID=3.25A
RL=61Ω
BFL4004
10V
0V
50Ω
VDD
D
PW=10μs
D.C.≤0.5%
G
VOUT
BFL4004
P.G
RGS=50Ω ^S
Fig.3 trr Reverse Recovery Time Test Circuit
D
BFL4004
G
S
500μH
VDD=50V
Driver MOSFET
No. A1796-2/5