ATP405_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ATP405
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=20A
ID=20A, VGS=10V
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=60V, VGS=10V, ID=40A
IS=40A, VGS=0V
Ratings
Unit
min
typ
max
100
V
10
μA
±10
μA
2.0
3.5
V
62
S
25
33 mΩ
4000
pF
300
pF
170
pF
38
ns
125
ns
220
ns
150
ns
68
nC
14
nC
15
nC
0.9
1.2
V
Switching Time Test Circuit
Avalanche Resistance Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=60V
ID=20A
RL=3Ω
D
VOUT
ATP405
P.G
50Ω
S
L
≥50Ω
10V
0V
50Ω
ATP405
VDD
Ordering Information
Device
ATP405-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1458-2/7