ATP204_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ATP204
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=25A, VGS=4.5V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=15V, VGS=10V, ID=100A
IS=100A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=50A
RL=0.3Ω
D
VOUT
ATP204
P.G
50Ω
S
Ratings
Unit
min
typ
max
30
V
1
μA
±10
μA
1.2
2.6
V
100
S
4.3
5.6 mΩ
6.5
9.1 mΩ
4600
pF
700
pF
390
pF
40
ns
690
ns
205
ns
110
ns
70
nC
22
nC
9.2
nC
1.03
1.2
V
Ordering Information
Device
ATP204-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1551-2/7