ATP201_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ATP201
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=18A
ID=18A, VGS=10V
ID=9A, VGS=4.5V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=15V, VGS=10V, ID=35A
IS=35A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=18A
RL=0.83Ω
D
VOUT
ATP201
P.G
50Ω
S
Ratings
Unit
min
typ
max
30
V
1
μA
±10
μA
1.2
2.6
V
24
S
13
17 mΩ
23
33 mΩ
985
pF
180
pF
100
pF
10
ns
230
ns
51
ns
39
ns
17
nC
4.7
nC
2.8
nC
0.97
1.2
V
Ordering Information
Device
ATP201-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1547-2/7