ATP112_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Electrical Characteristics at Ta=25°C
ATP112
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--13A
ID=--13A, VGS=--10V
ID=--7A, VGS=--4.5V
ID=--3.5A, VGS=--4V
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--25A
IS=--25A, VGS=0V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --30V
ID=13A
RL=2.3Ω
D
VOUT
ATP112
P.G
50Ω
S
Ratings
Unit
min
typ
max
--60
V
--1
μA
±10
μA
--1.2
--2.6
V
24
S
33
43 mΩ
42
59 mΩ
45
63 mΩ
1450
pF
155
pF
125
pF
10
ns
80
ns
150
ns
120
ns
33.5
nC
5.3
nC
7.9
nC
--0.97
--1.5
V
Ordering Information
Device
ATP112-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1754-2/7