ATP106_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ATP106
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--40V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--15A
ID=--15A, VGS=--10V
ID=--8A, VGS=--4.5V
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--20V, VGS=--10V, ID=--30A
IS=--30A, VGS=0V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --20V
ID= --15A
RL=1.33Ω
D
VOUT
ATP106
P.G
50Ω
S
Ratings
Unit
min
typ
max
--40
V
--1
μA
±10
μA
--1.5
--2.6
V
28
S
19
25 mΩ
29
41 mΩ
1380
pF
210
pF
150
pF
12
ns
120
ns
110
ns
90
ns
29
nC
6.4
nC
5.9
nC
--0.97
--1.5
V
Ordering Information
Device
ATP106-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No.A1597-2/7