ATP102 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ATP102
Continued from preceding page.
Parameter
Symbol
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, ID=--1mA
VDS=--10V, ID=--20A
ID=--20A, VGS=--10V
ID=--10A, VGS=--4.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--40A
VDS=--15V, VGS=--10V, ID=--40A
VDS=--15V, VGS=--10V, ID=--40A
IS=--40A, VGS=0V
Package Dimensions
unit : mm (typ)
7057-001
6.5
1.5
4.6
2.6
0.4
0.4
4
Ratings
Unit
min
typ
max
--1.2
--2.6
V
29
S
14
18.5 mΩ
22
31 mΩ
1490
pF
360
pF
270
pF
11
ns
135
ns
135
ns
185
ns
34
nC
4.2
nC
11.5
nC
--0.99
--1.5
V
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --15V
ID= --20A
RL=0.75Ω
D
VOUT
ATP102
P.G
50Ω
S
No. A1479-2/4