AML2002 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor LED Back Light

AML2002
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=100V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=100mA
VCB=10V, f=1MHz
IC=0.35A, IB=35mA
IC=0.35A, IB=35mA
IC=10μA, IE=0A
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
typ
200
120
9
125
0.82
220
200
8
50
2
70
max
1
1
560
220
1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
μs
ns
Switching Time Test Circuit
IB1
PW=50μs
D.C.≤1%
IB2
INPUT
RB
50Ω
OUTPUT
RL
+
820μF
VCC=100V
IC=10IB1= --10IB2=0.3A
IC -- VCE
1.0
0.9
100mA
80mA
0.8
60mA
50mA
0.7
40mA
0.6
30mA
0.5
20mA
0.4
4mA ^{6mA 8mA 10mA}
0.3
0.2
0.1
2mA
0
IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT15964
IC -- VBE
0.8
VCE=5V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT15966
IC -- VCE
0.20
0.18
600μA
500μA
0.16
0.14
700^μA
400μA
0.12
0.10
300μA
0.08
200μA
0.06
0.04
100μA
0.02
0
0
1000
7
5
3
2
100
7
5
3
2
IB=0μA
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT15965
hFE -- IC
Ta=75°C
VCE=5V
25°C
--25°C
10
7
5
3
2
1.0
0.01
23
5 7 _0.1
23
Collector Current, IC -- A
5 7 _1.0
IT15967
No. A1837-2/4