6LN04CH Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
1
0.95
2
0.4
6LN04CH
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=4V, ID=200mA
VDS=30V, VGS=4V, ID=200mA
VDS=30V, VGS=4V, ID=200mA
IS=200mA, VGS=0V
Ratings
Unit
min
typ
max
18.5
ns
26
ns
146
ns
69
ns
1.0
nC
0.2
nC
0.2
nC
0.83
1.2
V
Switching Time Test Circuit
VIN
4V
0V
VDD=30V
0.15
VIN
ID=200mA
RL=150Ω
D
VOUT
PW=10μs
0.05
D.C.≤1%
G
Rg
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
6LN04CH
P.G
50Ω
S
Rg=1.2kΩ
ID -- VDS
200
180
160
140
120
100
80
60
40
VGS=1.0V
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT11274
RDS(on) -- VGS
10
Ta=25°C
9
8
7
6
50mA
5
100mA
4
3
2 ID=10mA
1
0
0
2
4
6
8
Gate-to-Source Voltage, VGS -- V
10
IT11276
ID -- VGS
300
VDS=10V
250
200
150
100
50
0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V IT11275
RDS(on) -- Ta
7
6
5
4
3
2
V GVSV=GG1S.S=5=V24.,5.0IVVD, _{,=II1DD0==m510A0m0AmA}
1
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11277
No. A0938-2/4