5LN01M_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

5LN01M
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=50V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=50mA
ID=50mA, VGS=4V
ID=30mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=10V, ID=100mA
IS=100mA, VGS=0V
Switching Time Test Circuit
4V ^VIN
0V
VIN
PW=10μs
D.C.≤1%
VDD=25V
ID=50mA
RL=500Ω
D
VOUT
G
5LN01M
P.G
50Ω
S
Ratings
Unit
min
typ
max
50
V
1
μA
±10
μA
0.4
1.3
V
0.13
0.18
S
6
7.8
Ω
7.1
9.9
Ω
10
20
Ω
6.6
pF
4.7
pF
1.7
pF
18
ns
42
ns
190
ns
105
ns
1.57
nC
0.20
nC
0.32
nC
0.85
1.2
V
Ordering Information
Device
5LN01M-TL-E
5LN01M-TL-H
Package
MCP
MCP
Shipping
3,000pcs./reel
3,000pcs./reel
memo
Pb Free
Pb Free and Halogen Free
No.6137-2/7