3LP01SS_06 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

5LN01C
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ”Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=10V, ID=100mA
VDS=10V, VGS=10V, ID=100mA
VDS=10V, VGS=10V, ID=100mA
IS=100mA, VGS=0V
Ratings
Unit
min
typ
max
1.57
nC
0.20
nC
0.32
nC
0.85
1.2
V
Package Dimensions
unit : mm
7013A-013
2.9
0.1
3
1
0.95
2
0.4
Switching Time Test Circuit
4V ^VIN
0V
VIN
PW=10µs
D.C.≤1%
VDD=25V
ID=50mA
RL=500Ω
D
VOUT
G
5LN01C
P.G
50Ω
S
1 : Gate
2 : Source
3 : Drain
SANYO : CP
0.10
ID -- VDS
3.5V
0.09
0.08
4.0V
2.5V2.0V
0.07
VGS=1.5V
0.06
0.05
0.04
0.03
0.02
0.01
0
0
12
11
10
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V IT00054
RDS(on) -- VGS
Ta=25°C
9
8
50mA
7 ID=30mA
6
5
4
3
2
0
1
2
3
4
5
6
7
8
9 10
Gate-to-Source Voltage, VGS -- V IT00056
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
100
7
5
3
2
10
7
5
3
2
1.0
0.01
ID -- VGS
VDS=10V
0.5
1.0
1.5
2.0
2.5
3.0
Gate-to-Source Voltage, VGS -- V IT00055
RDS(on) -- ID
VGS=4V
Ta=75°C
25°C
--25°C
2
3
5 7 _0.1
Drain Current, ID -- A
2
3
IT00057
No.6555-2/4