3LN04S Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

3LN04S
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
IS=350mA, VGS=0V
Ratings
Unit
min
typ
max
17.5
ns
34.2
ns
104
ns
55.5
ns
0.87
nC
0.39
nC
0.14
nC
0.86
1.2
V
Package Dimensions
unit : mm (typ)
7027-004
1.6
0.4
0.8
0.4
1
3
2
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SANYO : SMCP
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=200mA
RL=75Ω
D
VOUT
Rg
3LN04S
P.G
50Ω
S
Rg=1.2kΩ
ID -- VDS
350
2.0V
300
250
200
150
100
VGS=1.5V
50
0
0
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V IT11709
RDS(on) -- VGS
4.0
Ta=25°C
3.5
3.0
ID=200mA
2.5
10mA
100mA
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V IT11711
ID -- VGS
200
VDS=10V
180
160
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V IT11710
RDS(on) -- Ta
3.0
2.5
2.0
VGS=1.5V, ^ID=10mA
1.5
1.0
VGS=2.5V, ^ID=100mA
0.5
VGS=4.0V, ^ID=200mA
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11712
No. A1194-2/4