3LN03SS Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

3LN03SS
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
IS=350mA, VGS=0
Ratings
Unit
min
typ
max
8
ns
4.5
ns
11
ns
6
ns
1
nC
0.4
nC
0.2
nC
0.88
1.2
V
Package Dimensions
unit : mm
2179A
Top View
1.4
0.25
3
Side View
0.1
12
0.45
0.2
Side View
Bottom View
3
21
1 : Gate
2 : Source
3 : Drain
SANYO : SSFP
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=15V
ID=180mA
RL=83Ω
D
VOUT
3LN03SS
P.G
50Ω
S
ID -- VDS
0.4
0.3
ID -- VGS
0.8
VDS=10V
0.6
0.2
VGS=1.5V
0.4
0.1
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT07510
RDS(on) -- VGS
5.0
Ta=25°C
4.0
3.0
ID=90mA
2.0
180mA
1.0
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Gate-to-Source Voltage, VGS -- V IT07512
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-to-Source Voltage, VGS -- V IT07511
RDS(on) -- Ta
1.6
1.4
1.2
1.0
0.8
0.6
I _{DI D==901m80Am, AV,GVSG=2S.=54V.0V}
0.4
0.2
0
--60 --40 --20 0
20 40 60 80 100 120 140
Ambient Temperature, Ta -- °C
IT08161
No.8231-2/4