3LN01S_06 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

3LN01S
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
Ratings
Unit
min
typ
max
1.58
nC
0.26
nC
0.31
nC
0.87
1.2
V
Package Dimensions
unit : mm
7027-004
1.6
0.4
0.8
0.4
1
3
2
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SANYO : SMCP
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
P.G
50Ω
VDD=15V
ID=80mA
RL=187.5Ω
D
VOUT
3LN01S
S
ID -- VDS
0.16
0.14
2.0V
0.12
0.10
0.08
VGS=1.5V
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V IT00029
RDS(on) -- VGS
10
Ta=25°C
9
8
7
6
ID=80mA
5 40mA
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9 10
Gate-to-Source Voltage, VGS -- V IT00031
0.30
VDS=10V
0.25
ID -- VGS
0.20
0.15
0.10
0.05
0
0
10
7
5
3
2
25°C
0.5
1.0
1.5
2.0
2.5
3.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- ID
IT00030
VGS=4V
Ta=75°C
25°C
--25°C
1.0
0.01
2
3
5 7 _0.1
2
3
5
Drain Current, ID -- A
IT00032
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