3LN01M_06 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

3LN01M
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
Ratings
Unit
min
typ
max
19
ns
65
ns
155
ns
120
ns
1.58
nC
0.26
nC
0.31
nC
0.87
1.2
V
Package Dimensions
unit : mm
7023-010
0.3
3
0.15
0 to 0.1
1
2
0.65 0.65
2.0
0.3
0.6
0.9
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
Switching Time Test Circuit
4V ^VIN
0V
VIN
PW=10µs
D.C.≤1%
VDD=15V
ID=80mA
RL=187.5Ω
D
VOUT
G
3LN01M
P.G
50Ω
S
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
ID -- VDS
3.5V
4.0V
2.0V
VGS=1.5V
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V IT00029
0.30
VDS=10V
0.25
ID -- VGS
0.20
0.15
0.10
0.05
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Gate-to-Source Voltage, VGS -- V IT00030
No.6138-2/4