3LN01C Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

3LN01C
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Switching Time Test Circuit
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0
4V ^VIN
0V
VIN
PW=10µs
D.C.≤1%
VDD=15V
ID=80mA
RL=187.5Ω
D
VOUT
G
3LN01C
P.G
50Ω
S
Ratings
Unit
min typ max
7.0
pF
5.9
pF
2.3
pF
19
ns
65
ns
155
ns
120
ns
1.58
nC
0.26
nC
0.31
nC
0.87
1.2 V
ID -- VDS
0.16
0.14
3.5V
0.12
4.0V
2.0V
0.10
0.08
VGS=1.5V
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS – V _IT00029
RDS(on) -- VGS
10
Ta=25°C
9
8
7
6
ID=80mA
5 40mA
4
3
2
1
0
0
1
234
5
67
8
9 10
Gate-to-Source Voltage, VGS – V _IT00031
0.30
VDS=10V
0.25
ID -- VGS
0.20
0.15
0.10
0.05
0
0
10
7
5
3
2
0.5
1.0
1.5
2.0
2.5
3.0
Gate-to-Source Voltage, VGS – V _IT00030
RDS(on) -- ID
VGS=4V
Ta=75°C
25°C
--25°C
1.0
0.01
23
5 7 _0.1
23
Drain Current, ID – A
5 7 _1.0
IT00032
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