30C02MH Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifi er Applications

30C02MH
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=50mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=200mA, IB=10mA
IC=200mA, IB=10mA
IC=10μA, IE=0A
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
typ
300
540
3.3
85
0.9
40
30
5
35
255
40
max
100
100
800
190
1.2
Unit
nA
nA
MHz
pF
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7019A-004
2.0
0.15
3
0 t o 0.02
1
2
0.65
0.3
Switching Time Test Circuit
IB1
PW=20μs
D.C. ≤1%
IB2
INPUT
VR
RB
50Ω
+
220μF
VBE= --5V
IC=20IB1= --20IB2=300mA
OUTPUT
RL
+
470μF
VCC=12V
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
IC -- VCE
700
600
10mA
7mA
5mA
500
3mA
2mA
400
1mA
300
200
400μA
200μA
100
IB=0A
0
0 100 200 300 400 500 600 700 800 900 1000
Collector-to-Emitter Voltage, VCE -- mV IT05082
IC -- VBE
800
VCE=2V
700
600
500
400
300
200
100
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V IT05083
No. 7364-2/4