30C02CH Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier Applications

30C02CH
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=10V, f=1MHz
IC=200mA, IB=10mA
IC=200mA, IB=10mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
220µF
VBE= --5V
20IB1= --20IB2=IC=300mA
OUTPUT
RL
+
470µF
VCC=12V
Ratings
Unit
min
typ
max
3.3
pF
85
190 mV
0.9
1.2
V
40
V
30
V
5
V
35
ns
255
ns
40
ns
IC -- VCE
700
600
10mA
7mA
5mA
500
400
300
200
100
0
0
1000
7
3mA
2mA
1mA
400µA
200µA
IB=0
100 200 300 400 500 600 700 800 900 1000
Collector-to-Emitter Voltage, VCE -- mV IT05082
hFE -- IC
Ta=75_°C
VCE=2V
25°C
5
--25°C
3
2
100
1.0
2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀ 2 3 5 7 ₁₀₀₀
Collector Current, IC -- mA
IT05084
IC -- VBE
800
VCE=2V
700
600
500
400
300
200
100
0
0
1000
7
5
3
2
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V IT05083
VCE(sat) -- IC
IC / IB=20
100
7
5
3
2
10
7
5
3
2
1.0
1.0
75^°C
Ta=25^°C--25_°C
23
5 7 ₁₀ 2 3 5 7 ₁₀₀ 2 3 5 7 ₁₀₀₀
Collector Current, IC -- mA
IT05085
No.7363-2/4