2SK4199LS Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Electrical Characteristics at Ta=25°C
2SK4199LS
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=10mA, VGS=0V
VDS=520V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=3A
VDS=200V, VGS=10V, ID=3A
VDS=200V, VGS=10V, ID=3A
IS=3A, VGS=0V
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
Ratings
Unit
min
typ
max
650
V
100
μA
±100 nA
3
5
V
0.75
1.4
S
3.0
3.9
Ω
260
pF
47
pF
9.3
pF
12
ns
19
ns
28
ns
13
ns
10.3
nC
2.4
nC
5.7
nC
0.9
1.2
V
0.9
1.2
0.75
123
2.55
2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
Switching Time Test Circuit
PW=10μs
D.C.≤0.5%
VGS=10V
VDD=200V
ID=1.5A
RL=133Ω
D
VOUT
G
2SK4199LS
P.G
RGS=50Ω ^S
Avalanche Resistance Test Circuit
L
≥50Ω
RG
2SK4199LS
10V
0V
50Ω
VDD
No. A1332-2/5