2SK4197FG Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Electrical Characteristics at Ta=25°C
2SK4197FG
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.8A
ID=1.8A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=3.5A
VDS=200V, VGS=10V, ID=3.5A
VDS=200V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0V
Package Dimensions
unit : mm (typ)
7529-001
10.16
3.18
4.7
2.54
Ratings
Unit
min
typ
max
600
V
100
μA
±100 nA
3
5
V
0.8
1.6
S
2.5
3.25
Ω
260
pF
50
pF
9.7
pF
12
ns
20
ns
28
ns
12
ns
11
nC
2.6
nC
5.8
nC
0.9
1.2
V
A
1.47 MAX
0.8
123
2.54
2.54
2.76
DETAIL-A
(0.84)
0.5
1 : Gate
FRAME _{2 : Drain}
EMC
3 : Source
SANYO : TO-220F-3SG
Switching Time Test Circuit
PW=10μs
D.C.≤0.5%
VGS=10V
VDD=200V
ID=1.8A
RL=111Ω
VOUT
D
G
P.G
RGS=50Ω
S
2SK4197FG
Avalanche Resistance Test Circuit
L
≥50Ω
RG
2SK4197FG
10V
0V
50Ω
VDD
No. A1367-2/6