2SK3597-01 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – POWER MOSFET N-CHANNEL SILICON POWER MOSFET

2SK3597-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Tc [°C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
800
700
I =18A
AS
600
I =27A
AS
500
I =45A
AS
400
300
200
100
0
0
25
50
75
100
125
150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
5
Surface mounted on
1000mm²,t=1.6mm FR-4 PCB
4 ^{(Drain pad area : 500mm 2)}
3
2
1
0
0
25
50
75
100 125 150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
120
20V
100
10V
8V
80
7.5V
60
7.0V
40
6.5V
6.0V
20
VGS=5.5V
0
0
2
4
6
8
10
12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
0.1
0.1
1
10
100
ID [A]
2