2SK3491 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

2SK3491
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
^yfs
RDS(on)
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Turn-ON Delay Time
td(on)
Rise Time
Turn-OFF Delay Time
tr
td(off)
Fall Time
Diode Forward Voltage
tf
VSD
Marking : K3491
ID=1mA, VGS=0
VDS=600V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.5A
VDS=10V, ID=0.5A
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=200V, VGS=10V, ID=1.0A
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=1.0A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
PW=1µs ^VIN
D.C.≤0.5%
G
VDD=200V
ID=0.5A
RL=400Ω
D
VOUT
P.G
RGS
50Ω
2SK3491
S
Ratings
Unit
600
V
±30
V
1.0
A
4.0
A
1.0
W
20
W
150
°C
--55 to +150
°C
Ratings
Unit
min
typ
max
600
V
100 µA
±100 nA
2.5
3.5
V
430
850
mS
8.5
11
Ω
135
pF
40
pF
20
pF
6
nC
8
ns
7
ns
17
ns
30
ns
0.83
1.2
V
ID -- VDS
2.0
1.8
10.0V
1.6
1.4
20.0V
6.0V
1.2
5.5V
1.0
0.8
5.0V
0.6
0.4
VGS=4.5V
0.2
0
0
5
10
15
20
Drain-to-Source Voltage, VDS -- V IT02865
1.6
VDS=10V
1.4
ID -- VGS
Tc= --25°C
1.2
25°C
1.0
75°C
0.8
0.6
0.4
0.2
0
0
5
10
15
20
Gate-to-Source Voltage, VGS -- V IT02866
No.6959-2/4