2SK3486 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

2SK3486
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=8A
VDS=10V, VGS=4V, ID=8A
VDS=10V, VGS=4V, ID=8A
IS=8A, VGS=0
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=4A
RL=2.5Ω
D
VOUT
2SK3486
P.G
50Ω
S
Ratings
Unit
min
typ
max
570
pF
110
pF
80
pF
13
ns
28
ns
53
ns
65
ns
7.6
nC
1.2
nC
2.1
nC
0.9
1.2
V
ID -- VDS
5
4
3
2
1
VGS=1.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT03512
RDS(on) -- VGS
100
Tc=25°C
90
80
70
60
ID=2A ^4A
50
40
30
20
10
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT04274
8
VDS=10V
7
ID -- VGS
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Gate-to-Source Voltage, VGS -- V IT04273
RDS(on) -- Tc
100
90
80
70
60
50
40
IDID==24AA, _{,VVGGSS==24.5.0VV}
30
20
10
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT04275
No.7197-2/4