2SK1646 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – For C to X-band Local Oscillator and Amplifier

2SK1646
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate-to-Source Breakdown Voltage
Saturated Drain Current
Cutoff Voltage
Forward Transfer Admittance
Minimum Noise Figure
Associated Gain
Maximum Available Gain
V(BR)GSO
IDSS
VGS(off)
^yfs
NFmin
Ga
MAG
IGS=--10µA
VDS=3V, VGS=0
VDS=3V, ID=100µA
VDS=3V, ID=10mA
VDS=3V, ID=10mA, f=12GHz
VDS=3V, ID=10mA, f=12GHz
VDS=3V, ID=10mA, f=12GHz
* : The 2SK1646 is classified by IDSS as follows.
IDSS RANK RANGE (mA)
04
30 to 50
05
45 to 60
05H
45 to 70
min
--5.0
30
--0.5
20
Ratings
typ
45
34
2.5
5.0
7.0
Unit
max
V
70 mA
--5.0
V
mS
dB
dB
dB
S-Parameter
S11 VDS=3V, ID=10mA, 20mA
50
25
9GHz
10
<9GHz>
100
15GH^1z50
200
250
0
10
25
<6GHz>
6GHz
--10
--25
50 100
150 250
--50^3GHz
--250
--200
I D=2I0Dm=_-^A1_-1^0m₀₀^A--150
1.0unit, max
IT03192
S21 VDS=3V, ID=10mA, 20mA
120˚
90˚
60˚
150˚
I _{DI=D2=01m0AmA}
±180˚
--150˚
<6GHz>
6GHz
9GHz
<9GHz>
30˚
0
--30˚
--120˚
--90˚
--60˚
5.0unit, max
IT03194
S12 VDS=3V, ID=10mA, 20mA
120˚
90˚
60˚
150˚
±180˚
--150˚
ID _=10mA
ID=20mA
<6GHz>
30˚
0
12GHz
--30˚
<12GHz>
--120˚
--90˚
S22 VDS=3V, ID=10mA, 20mA
--60˚
15G<1H5zGHz>
0.25unit,
IT03193
max
50
25
10
12GHz
<12GHz>
0
10
25 50 100
9GHz ^<9GHz>
--10
--25
--50
100
150
200
250
150 250
I
DI=D2=0m10AmA
--250
--200
--150
--100
1.0unit, max
IT03195
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